GALLIUM-ARSENIDE PASSIVATION THROUGH NITRIDATION WITH HYDRAZINE

Passivating films were grown on gallium arsenide by direct nitridation with hydrazine at 300-400-degrees-C. Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis show that the films are prim arily gallium nitride with an oxide impurity. The oxide content is a f unction of the surface pretreatment, reaction temperature, and water c oncentration in the hydrazine. Improvements in the band gap photolumin escence with nitridation indicate a lower surface state density and re flect an improvement in the termination of the semiconductor lattice.