ELECTRICAL CHARACTERIZATION OF INTERFACE P-SI-POLY N-C-SI OBTAINED BYLPCVD DEPOSITION OF HEAVILY IN-SITU BORON-DOPED FILMS (VOL 3, PG 1675, 1993)()

Authors
AKANI M BENOUIS CE BENZOHRA M
Citation
M. Akani et al., ELECTRICAL CHARACTERIZATION OF INTERFACE P-SI-POLY N-C-SI OBTAINED BYLPCVD DEPOSITION OF HEAVILY IN-SITU BORON-DOPED FILMS (VOL 3, PG 1675, 1993)(), Journal de physique. III, 3(11), 1993, pp. 2163-2163
Citations number
1
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
3
Issue
11
Year of publication
1993
Pages
2163 - 2163
Database
ISI
SICI code
1155-4320(1993)3:11<2163:ECOIPN>2.0.ZU;2-N