Layers of orthorhombic alpha-MoO3 on a glass substrate have been obtai
ned from MoTe2 films. First, oriented MoTe2 films were prepared by ann
ealing under tellurium pressure of MoTe amorphous DC sputtered films.
Then they were thermally oxidized in an oxygen atmosphere at 723 K for
half an hour. The films were investigated by X-ray diffraction, scann
ing electron microscopy, photoelectron spectroscopy analysis (XPS), op
tical absorption and electrical measurements. It was found that stoich
iometric thin films were obtained. The crystallites of the films have
a preferred orientation with their basal planes parallel to the substr
ate. XPS quantitative analysis shows that a small amount (2-3%) of Te
is present in the films. This small amount increases the conductivity
of the layers in such a way that the room temperature resistivity is a
round 10(8) OMEGA cm.