INVESTIGATION OF COMPOSITION UNIFORMITY OF MOSIX SPUTTERING FILMS BASED ON MEASUREMENT OF ANGULAR-DISTRIBUTION OF SPUTTERED ATOMS

The angular distribution of Mo atoms and that of Si atoms ejected from an MoSi2.5 sintered target in d.c. magnetron sputtering, were measure d and it was found that Si atoms were more apt to be ejected normally than Mo atoms. The composition distribution of the MoSix film calculat ed using the angular distributions nearly agreed with the measured one ; thus, it was clearly demonstrated that the difference between the an gular distribution of Mo atoms and that of Si atoms causes the non-uni formity of the MoSix film. The dependence of the composition distribut ion on the discharge voltage was also investigated and it was shown th at the composition distribution becomes more uniform by increasing the discharge voltage.