OPTIMIZATION OF ION-IMPLANTATION DAMAGE ANNEALING BY MEANS OF HIGH-RESOLUTION X-RAY-DIFFRACTION

High-resolution X-ray diffraction (HR-XRD) was investigated as a possi ble technique for the qualitative analysis of damage annealing of low- dose, high-energy implanted (001) silicon, implanted with dopants smal ler than the host atom. The choice of proper Bragg reflection for the rocking-curve measurements is shown to be of crucial importance. The g raphic construction of the Ewald sphere is a useful aid for this purpo se. As the in-plane lattice constant is confined by the underlying sub strate, a change occurs in the perpendicular direction only. Therefore the (026)1 reflection appears to be the most suitable for the detecti on of changes in lattice constant caused by implantation damage. Quali tative analysis of rocking curves of P- and B-implanted Si samples was compared with electrical measurements and cross-section transmission electron micrographs. It could be established that the minimum implant ation doses of P and B at energies ranging from 0.5 to 1.5 MeV, for wh ich HR-XRD is sensitive enough, are about 1.5 x 10(14) cm-2 and 5 x 10 (13) cm-2 respectively. The minimum peak temperature needed for comple te damage anneal by transient-rapid thermal annealing was about 1400 K for all doses considered.