AN AS2S3-C BILAYER RESIST SYSTEM FOR SUBMICRON LITHOGRAPHY

A new bilayer inorganic resist system consisting of As2S3 thermally ev aporated onto carbon layers is introduced The amorphous As2S3 layers a re investigated as image layers for uv, e beam and X-ray exposure. The wet chemically developed micron and submicron structures of the top l ayer are transferred onto the carbon bottom layer by oxygen-reactive i on etching (O2-RIE). The etching rates and the selectivities of differ ent etching gases (O2, CF4, CF4-O2, SF6, CBrF3) for the bilayer system and for Si, Ge and polyimide (Pl) substrates are given.