A new bilayer inorganic resist system consisting of As2S3 thermally ev
aporated onto carbon layers is introduced The amorphous As2S3 layers a
re investigated as image layers for uv, e beam and X-ray exposure. The
wet chemically developed micron and submicron structures of the top l
ayer are transferred onto the carbon bottom layer by oxygen-reactive i
on etching (O2-RIE). The etching rates and the selectivities of differ
ent etching gases (O2, CF4, CF4-O2, SF6, CBrF3) for the bilayer system
and for Si, Ge and polyimide (Pl) substrates are given.