AN EXPERIMENTAL-STUDY OF INTERFACE REACTION AT THE PRACTICAL PT-SI INTERFACE BY XPS

Authors
DAI DX DAVOLI I
Citation
Dx. Dai et I. Davoli, AN EXPERIMENTAL-STUDY OF INTERFACE REACTION AT THE PRACTICAL PT-SI INTERFACE BY XPS, Vacuum, 44(11-12), 1993, pp. 1189-1192
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
44
Issue
11-12
Year of publication
1993
Pages
1189 - 1192
Database
ISI
SICI code
0042-207X(1993)44:11-12<1189:AEOIRA>2.0.ZU;2-L
Abstract
X-ray photoelectron spectroscopy (XPS) measurements of core-level and valence band have been used to study the practical Pt/Si interface. Th e evidence of silicide Pt2Si formed by chemical reaction at this inter face is obtained. The monotonic decrease of the branching ratio for tw o Pt 4f spin-orbit split peaks of silicide Pt2Si with decreasing photo emission angles is measured. Some possible interpretation for this cha nge are also presented.