COLOR-CENTER PHENOMENA IN LASER-EXCITED LIF SINGLE-CRYSTALS IRRADIATED WITH X-RAYS

Citation
P. Selvarajan et al., COLOR-CENTER PHENOMENA IN LASER-EXCITED LIF SINGLE-CRYSTALS IRRADIATED WITH X-RAYS, Indian Journal of Pure & Applied Physics, 31(11), 1993, pp. 771-774
Citations number
NO
Categorie Soggetti
Physics
ISSN journal
00195596
Volume
31
Issue
11
Year of publication
1993
Pages
771 - 774
Database
ISI
SICI code
0019-5596(1993)31:11<771:CPILLS>2.0.ZU;2-M
Abstract
Colour centre phenomena in LiF single crystals have been studied when they are subjected to different conditions like (i) quenching, (ii) la ser excitation, (iii) X-ray irradiation and (iv) a combination of them . The absorption coefficient (alpha) of as-cleaved LiF has low values in the low wavelength region (alpha at 200 nm is 1.5 cm-1), the absorp tion in the low wavelength region is found to increase with quenching and laser excitation. X-ray irradiation of these crystals produces two absorption bands with peaks at 250 nm and 448 nm (F- and M-bands, res pectively), the absorption in these bands is increasing with the time of laser excitation. If quenched and X-ray irradiated crystals are lat er subjected to laser excitation, the absorption in the two bands decr eases. The thermoluminescence (TL) output exhibits two glow peaks at 2 00 and 298-degrees-C; the TL outputs have been correlated with optical absorption data. An attempt is made to understand the defect processe s that are taking place in LiF crystals.