ELECTRICAL-PROPERTIES OF VANADIUM POLYCRYSTALLINE THIN-FILMS

Thin vanadium films of thickness in the range 35-250 nm have been prep ared by thermal evaporation under a vacuum of 2 x 10(-5) Torr. Investi gation by transmission electron microscopy showed that the grain size increased with increasing film thickness. The films had a polycrystall ine structure. The fitting of the resistivity thickness relation prove d to be in good agreement with Fuchs-Sondheimer and Mayadas-Shatzkes t heories. The dependence of temperature on the electrical resistivity s hows that vanadium films always have a positive temperature coefficien t of resistance. The mean free path l0 of the free charge carriers as well as the resistivity rho0 of vanadium films of infinite thickness h ave been determined from theoretical formula.