Thin vanadium films of thickness in the range 35-250 nm have been prep
ared by thermal evaporation under a vacuum of 2 x 10(-5) Torr. Investi
gation by transmission electron microscopy showed that the grain size
increased with increasing film thickness. The films had a polycrystall
ine structure. The fitting of the resistivity thickness relation prove
d to be in good agreement with Fuchs-Sondheimer and Mayadas-Shatzkes t
heories. The dependence of temperature on the electrical resistivity s
hows that vanadium films always have a positive temperature coefficien
t of resistance. The mean free path l0 of the free charge carriers as
well as the resistivity rho0 of vanadium films of infinite thickness h
ave been determined from theoretical formula.