WIDE-BAND AND HIGH-POWER COMPRESSIVELY STRAINED GAINASP INP MULTIPLE-QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS EMITTING AT 1.3-MU-M/

Authors
FUKUSHIMA T MATSUMOTO N NAKAYAMA H IKEGAMI Y NAMEGAYA T KASUKAWA A SHIBATA M
Citation
T. Fukushima et al., WIDE-BAND AND HIGH-POWER COMPRESSIVELY STRAINED GAINASP INP MULTIPLE-QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS EMITTING AT 1.3-MU-M/, IEEE photonics technology letters, 5(9), 1993, pp. 963-965
Citations number
11
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
5
Issue
9
Year of publication
1993
Pages
963 - 965
Database
ISI
SICI code
1041-1135(1993)5:9<963:WAHCSG>2.0.ZU;2-B
Abstract
Compressively strained 1.3-mum GaInAsP/InP multiple-quantum-well (MQW) ridge waveguide lasers were fabricated. Through optimizing the total well thickness, large bandwidth over 11 GHz was achieved, together wit h high quantum efficiency of about 0.48 W/A and high power output of 6 0 mW before rollover. The laser also showed less temperature sensitivi ty up to an elevated temperature of 85-degrees-C.