RESONANT-CAVITY LIGHT-EMITTING DIODE AND DETECTOR USING EPITAXIAL LIFTOFF

Epitaxial liftoff (ELO) is used in a novel manner to form arrays of ve rtical resonant cavity light emitting diodes (RCLED's) using two metal mirrors. The epitaxial layers consist of an InP/InGaAs p-i-n structur e. Electroluminescence from the vertically emitting resonant cavity is measured CW at room temperature to have a spectral width of 9 meV in contrast to a photoluminescence spectral width of 51 meV for the unpro cessed layers. The structure behaves as a resonant detector under reve rse bias. Cavities formed in this manner will find wide application in surface emitting and detecting arrays and spatial light modulators, a nd as a means of studying the physics of spontaneous emission.