DIRECT DETERMINATION OF PROCESS LATITUDE FOR TITANIUM SALICIDE FORMATION

A new quantitative method is presented to determine the sensitivity of the Ti salicide process to the de-oxidation step before the metal dep osition. 0.7 mu m CMOS production-type wafers have been processed for this step in a system allowing controlled chemical oxide bevelling alo ng a wafer diameter. The wafers then went through all the subsequent p rocessing steps of an industrial process including electrical testing. Results obtained on various electrical test patterns are discussed, a nd information about the salicide process window is presented.