DEPOSITION AND STUDY OF CVD - TUNGSTEN AND MOLYBDENUM THIN-FILMS AND THEIR IMPACT ON MICROELECTRONICS TECHNOLOGY

Authors
GESHEVA KA KRISOV TA SIMKOV UI BESHKOV GD
Citation
Ka. Gesheva et al., DEPOSITION AND STUDY OF CVD - TUNGSTEN AND MOLYBDENUM THIN-FILMS AND THEIR IMPACT ON MICROELECTRONICS TECHNOLOGY, Applied surface science, 73, 1993, pp. 86-89
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
73
Year of publication
1993
Pages
86 - 89
Database
ISI
SICI code
0169-4332(1993)73:<86:DASOC->2.0.ZU;2-8
Abstract
Tungsten and molybdenum films have been deposited on silicon by the py rolysis of hexacarbonyls at 400 degrees C under atmospheric pressure. Auger analysis of W films produced by the pyrolysis of W(CO)(6) reveal s a large amount of carbon and oxygen. Post-deposition rapid thermal a nnealing at a temperature less than 800 degrees C and hydrogen-contain ing atmosphere leads to obtaining low-resistivity thin-film materials, based on refractory metals.