FORMATION OF EPITAXIAL SI COSI2,/SI(100) HETEROSTRUCTURES USING ALLOTAXY/

Molecular beam allotaxy is capable of growing buried single crystallin e CoSi2 layers in Si(100). Buried layers are formed by growing first a precipitate layer embedded in epitaxial Si by molecular beam epitaxy and by subsequent high temperature annealing. Silicide layers with thi cknesses between 27 and 220 nm have been fabricated. These layers have low channeling minimum yields of similar to 5%, abrupt interfaces and low electrical resistivities of typically 14 mu Omega.cm at room temp erature. The elastic strain, measured by high-resolution X-ray diffrac tion, increases with decreasing layer thickness.