EPITAXIAL BETA-FESI2, FORMED BY FE DEPOSITION ON HOT SI(001)

Authors
READER AH DUCHATEAU JPWB TIMMERS J HAKKENS FJG
Citation
Ah. Reader et al., EPITAXIAL BETA-FESI2, FORMED BY FE DEPOSITION ON HOT SI(001), Applied surface science, 73, 1993, pp. 131-134
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
73
Year of publication
1993
Pages
131 - 134
Database
ISI
SICI code
0169-4332(1993)73:<131:EBFBFD>2.0.ZU;2-J
Abstract
Epitaxial beta-FeSi2 has been formed by depositing iron (Fe), at a rat e of 0.01 nm/s, onto hot Si(001) substrates at 630 degrees C. Epitaxia l films were formed as long as the disilicide thickness was less than 320 nm. Post-annealing at around 800 degrees C improved the epitaxial quality of the films.