Epitaxial beta-FeSi2 has been formed by depositing iron (Fe), at a rat
e of 0.01 nm/s, onto hot Si(001) substrates at 630 degrees C. Epitaxia
l films were formed as long as the disilicide thickness was less than
320 nm. Post-annealing at around 800 degrees C improved the epitaxial
quality of the films.