ION-BEAM SYNTHESIS OF BURIED AND SURFACE NICKEL SILICIDES DURING A SINGLE IMPLANTATION STEP

An unusual Ni distribution with two completely separated buried and su rface silicide layers has been observed after Ni ion implantation in S i(111) kept at a temperature of 300 degrees C, with a dose of 1.1 X 10 (17)/cm(2) and at a fixed energy of 90 keV. The Ni profile and its sub strate temperature dependence, its dose dependence and the influence f rom the preceding Co implantation were studied by RBS, AES and TEM. A model based on the diffusion of the transition metal, defect annealing during the implantation, and the gettering power of the surface and t he end-of-range defects is presented.