The effect of different (0.5 to 4 keV) Ar+ energy ions on the composit
ion of the surfaces of TbSi1.7 and FeSi has been monitored by Auger el
ectron spectroscopy. During Ar+ ion bombardment of TbSi1.7 the surface
was enriched with Si while the FeSi surface was enriched with Fe. The
surface concentration changed in both cases when the ion energy was c
hanged. TRIM calculations were used to predict the changes. Radiation-
induced segregation assisted by irradiation-enhanced diffusion was use
d to explain the concentration changes due to changes in ion energy.