INFLUENCE OF TEMPERATURE ON THE PROPERTIES OF SPUTTERED ALSICU FILMS

Since aluminum is the most widely used material for IC metallization, a good understanding of its properties under varying conditions is a n ecessity. This article discusses the properties of AlSi(1%)Cu(0.5%) la yers sputtered in a cluster tool at different substrate temperatures, ranging from 100 to 500 degrees C. In addition to standard analysis te chniques to determine stress and grain size, a new optical technique f or measuring haze and light point defects of AlSiCu thin films is intr oduced. The correlation between the different techniques is examined a nd the additional information obtainable from haze measurements is eva luated. In the following experiment, all wafers received a post anneal treatment at 400 or 500 degrees C. The changes in the layer propertie s and the quality and quantity of hillocks are presented.