THE OXIDATION OF TERBIUM SILICIDE

TbSi1.7 was grown on Si(100) and on amorphous Si. After these samples were oxidized at 450 degrees C for 90 min, 600 degrees C for 30 min an d 800 degrees C for 30 min at atmospheric pressure, Auger depth profil es for all the samples were measured. These profiles indicate that Tb segregated to the surface. Auger spectra show that Tb and not Si is ox idized. During room temperature oxidation of TbSi1.7 in the vacuum sys tem, the initial oxidation of TbSi1.7 also shows an enrichment of Tb o n the surface, and that Tb as well as Si are oxidized.