TEMPERATURE STABILITY OF COBALT SCHOTTKY CONTACTS ON N-TYPE AND P-TYPE 6H SILICON-CARBIDE

Citation
N. Lundberg et al., TEMPERATURE STABILITY OF COBALT SCHOTTKY CONTACTS ON N-TYPE AND P-TYPE 6H SILICON-CARBIDE, Applied surface science, 73, 1993, pp. 316-321
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
ISSN journal
01694332
Volume
73
Year of publication
1993
Pages
316 - 321
Database
ISI
SICI code
0169-4332(1993)73:<316:TSOCSC>2.0.ZU;2-4
Abstract
Rectifying Schottky contacts have been manufactured on n- and p-type 6 H silicon carbide using e-beam evaporation of cobalt. Heat treatments in the 300 to 1100 degrees C temperature range have been made to study the feasibility of high temperature contacts in this material system. Rutherford backscattering spectrometry and X-ray diffraction have rev ealed the formation of different cobalt silicides (Co2Si, CoSi, and Co Si2) at higher temperatures than for the Co/Si system. No evidence of silicidation was found below 600 degrees C and SEM micrographs reveale d carbon agglomerates at the surface after silicidation. Electrical pr operties have been examined using I-V and C-V measurements, and the ba rrier heights of cobalt and Co2Si were evaluated. The contacts display ed excellent forward I-V characteristics with good linearity over 3-6 decades and were rectifying even after heat treatments al 800 degrees C.