THE ROLE OF HYDROGEN-ATOMS (H-ATOMS) IN METASTABLE DEFECT FORMATION AT SI-SIO2 INTERFACES AND IN HYDROGENATED AMORPHOUS SI (A-SI-H)

Mechanisms for defect metastability with H atom participation (i) at S i-SiO2 interfaces in field effect transistors (FETs) and (ii) in hydro genated amorphous silicon (a-Si:H) based solar cells are presented. In trinsic metastability reaction pathways are shown to be associated wit h inherent differences in defect bonding properties between charged (i ) Si atoms and (ii) H, O and N atoms. Defect reaction equations, suppo rted by quantum chemistry calculations, are presented. Metastable defe cts emphasized in this paper are created by hole trapping followed by H attachment.