ON THE WAY TO THE INVESTIGATION OF HYDROGEN IN GAN - HYDROGEN IN NITROGEN-DOPED GAP AND GAAS

Citation
B. Clerjaud et al., ON THE WAY TO THE INVESTIGATION OF HYDROGEN IN GAN - HYDROGEN IN NITROGEN-DOPED GAP AND GAAS, Physica status solidi. a, Applied research, 159(1), 1997, pp. 121-131
Citations number
28
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
159
Issue
1
Year of publication
1997
Pages
121 - 131
Database
ISI
SICI code
0031-8965(1997)159:1<121:OTWTTI>2.0.ZU;2-F
Abstract
Because of the great electronegativity of nitrogen, hydrogen is expect ed to behave differently in GaN and in the more conventional III-V sem iconductors GaP and GaAs. In order to check this point, we have perfor med a spectroscopic investigation of nitrogen and hydrogen doped GaP a nd GaAs. In GaP, three different states of a nitrogen-hydrogen complex have been observed; two of these states, which correspond to two diff erent charge states of the complex, are observed at equilibrium wherea s the third one is metastable. The complex involves two hydrogen atoms ; its structure is discussed. In GaAs, only two states of the complex are observed: a stable one and a metastable one.