B. Clerjaud et al., ON THE WAY TO THE INVESTIGATION OF HYDROGEN IN GAN - HYDROGEN IN NITROGEN-DOPED GAP AND GAAS, Physica status solidi. a, Applied research, 159(1), 1997, pp. 121-131
Because of the great electronegativity of nitrogen, hydrogen is expect
ed to behave differently in GaN and in the more conventional III-V sem
iconductors GaP and GaAs. In order to check this point, we have perfor
med a spectroscopic investigation of nitrogen and hydrogen doped GaP a
nd GaAs. In GaP, three different states of a nitrogen-hydrogen complex
have been observed; two of these states, which correspond to two diff
erent charge states of the complex, are observed at equilibrium wherea
s the third one is metastable. The complex involves two hydrogen atoms
; its structure is discussed. In GaAs, only two states of the complex
are observed: a stable one and a metastable one.