A. Buczkowski et al., PHOTOCONDUCTANCE MINORITY-CARRIER LIFETIME VS SURFACE PHOTOVOLTAGE DIFFUSION LENGTH IN SILICON, Journal of the Electrochemical Society, 140(11), 1993, pp. 3240-3245
Recombination lifetime and diffusion length measured with the photocon
ductance decay and surface photovoltage techniques are compared theore
tically and experimentally, and reasons for possible discrepancies are
discussed. Specific examples are given which show that, if full advan
tage of these noncontact and nondestructive procedures is to be taken,
it is necessary that surface recombination be considered in the analy
sis of any experimental data. This is particularly true for samples wh
ere the diffusion length is greater than one-fourth of the wafer thick
ness, a condition for which it is essential that theoretical algorithm
s for separating the bulk and surface components of recombination be d
eveloped.