FILM GROWTH-KINETICS OF CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM CU(HFA)2

Copper films have been grown by chemical vapor deposition (CVD) from c opper (II) hexafluoroacetylacetonate, Cu(HFA)2, in a cold wall, vertic al flow reactor with pure hydrogen and a mixture of hydrogen (75%)/arg on (25%). The quantitatively measured operating conditions were 10 Tor r total pressure, 300 to 400-degrees-C substrate temperature, and 70 t o 85-degrees-C precursor temperature. Film growth rates were between 1 00 to 1000 angstrom/min depending on processing conditions. The copper film growth rate was 0.5 order in both precursor and hydrogen concent ration. A deposition temperature of about 300-degrees-C was needed to obtain significant film growth. Only surface impurities were detected in copper film. Any impurities below the surface were under the detect ion limits of Auger electron spectroscopy analysis. Resistivities of 2 .0-3.0 muOMEGA cm were routinely obtained. Two mechanisms are proposed for the growth of copper films by CVD using Cu(HFA), which are consis tent with our experimental observations and those in the literature.