M. Kogure et al., INFLUENCE OF ORGANIC IMPURITIES IN HYDROGEN-PEROXIDE FOR ADVANCED WETCHEMICAL-PROCESSING, Journal of the Electrochemical Society, 140(11), 1993, pp. 3321-3326
An improved high purity hydrogen peroxide was developed for advanced s
emiconductor devices manufacturing. After treatment of a Si wafer with
this hydrogen peroxide, no metallic impurity was adsorbed onto the Si
wafer surface. However, a few parts per million of organic impurities
remain in the hydrogen peroxide as total organic carbon (TOC). These
organic impurities result from the production process f or raw hydroge
n peroxide and are identified as formic acid, acetic acid, and cyclohe
xanone deviatives. To examine the influence of organic impurities on s
emiconductor devices, we evaluated the electrical characteristics of m
etal oxide semiconductor (MOS) diodes with thermal oxide films, includ
ing chemical oxide by treatment with the improved hydrogen peroxide. I
n spite of high organic impurity content, the experimental results sho
w that the organic impurities in the hydrogen peroxide did not affect
the properties of MOS diodes with about 9 nm oxide films.