CHARACTERIZATION OF POLY-SI SIO2/SI(100) STRUCTURE BY VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY/

Authors
KAWAZU Y FUKUDA H HAYASHI T IWABUCHI T
Citation
Y. Kawazu et al., CHARACTERIZATION OF POLY-SI SIO2/SI(100) STRUCTURE BY VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY/, Electronics Letters, 29(20), 1993, pp. 1758-1759
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
20
Year of publication
1993
Pages
1758 - 1759
Database
ISI
SICI code
0013-5194(1993)29:20<1758:COPSSB>2.0.ZU;2-Q
Abstract
The structure of polycrystalline silicon (poly-Si)/SiO2/Si(100) was in vestigated using variable-angle spectroscopic ellipsometry (VASE) meas urement with the Bruggeman effective medium approximation model. In th is structure, the poly-Si and SiO2 film thicknesses and poly-Si compos ition, as well as the top surface roughness, can be characterised well . The VASE results are very close to those obtained by cross-sectional transmission electron microscopy.