ROOM-TEMPERATURE RESONANT-TUNNELING BIPOLAR-TRANSISTOR XNOR AND XOR INTEGRATED-CIRCUITS

Citation
Ac. Seabaugh et al., ROOM-TEMPERATURE RESONANT-TUNNELING BIPOLAR-TRANSISTOR XNOR AND XOR INTEGRATED-CIRCUITS, Electronics Letters, 29(20), 1993, pp. 1802-1803
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
29
Issue
20
Year of publication
1993
Pages
1802 - 1803
Database
ISI
SICI code
0013-5194(1993)29:20<1802:RRBXAX>2.0.ZU;2-A
Abstract
The first resonant tunnelling bipolar transistor integrated circuits o perating at room temperature are demonstrated. The circuits are compos ed of cointegrated resonant tunnelling bipolar transistors and double heterojunction bipolar transistors bawd on InP substrates. Both a thre e-transistor XNOR and a seven-transistor XOR logic gate have been demo nstrated using a 3 V power supply.