IMPLEMENTATION OF A GALLIUM-ARSENIDE MULTICHIP DIGITAL CIRCUIT OPERATING AT 500-1000 MHZ CLOCK RATES USING A SI CU/SIO2 MCM-D TECHNOLOGY/

Two different deposited multichip modules (MCM's) were fabricated in n CHIP's nC3000 Si/Cu/SiO2 process, The first of these MCM's was a passi ve test coupon containing a variety of microstrip and stripline transm ission line structures, allowing the measurement of de and ac signal a mplitude losses in long conductors, as well as assessments of crosstal k and reflections as functions of line dimensions and spacings, The se cond MCM incorporated sixteen Gallium Arsenide (GaAs) integrated circu its, all designed to work together at clock rates in the hundreds of M Hz; all components were attached, face up, with an aluminum wire bondi ng process. The design, fabrication, assembly and test processes for t hese modules will be described, as well as the lessons learned about t his MCM process for the design of subsystems up to the high hundreds o f MHz clock rates.