ROOM-TEMPERATURE MEASUREMENT OF PHOTOLUMINESCENCE SPECTRA OF SEMICONDUCTORS USING AN FT-RAMAN SPECTROPHOTOMETER

This paper demonstrates the utility of an FT-Raman accessory for an FT -IR spectrophotometer in obtaining the room-temperature photoluminesce nce (PL) spectra of semiconductors used in photovoltaic and electro-op tical devices. Sample types analyzed by FT-IR/PL spectroscopy included bulk silicon and films of gallium indium arsenide phosphide (GaInAsP) , copper indium diselenide (CuInSe2), and gallium arsenide-germanium a lloy on various substrates. The FT-IR/PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize com plete semiconductor devices as well as component materials at room tem perature. Some suggestions for improving the spectral range of the tec hnique and removing instrumental spectral artifacts are presented.