STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSB EPITAXIAL-FILMS GROWN ONGAAS BY LOW-PRESSURE MOCVD

InSb heteroepitaxial films have been grown on GaAs by low-pressure(LP) MOCVD and the structural and electrical properties, thereof have been investigated. For 1.5-2.0 mu m thick InSb heteroepitaxial films, the FWHM of the DCRC ranges from 420 to 894 arcsec and the 77 K electron H all mobilities are inversely proportional to the square of the rocking -curve width. This result suggests that the electron mobility is limit ed to the scattering by dislocations. The scattering by the charged di slocations explains the mobility-temperature characteristics of the fi lm having larger rocking-curve width.