Sl. Morelhao et Lp. Cardoso, ANALYSIS OF INTERFACIAL MISFIT DISLOCATION BY X-RAY MULTIPLE DIFFRACTION, Solid state communications, 88(6), 1993, pp. 465-469
We have developed a new method to analyze the stress state of heteroep
itaxial systems using X-ray multiple diffraction (MD). A fitting progr
am extends the MD theory for mosaic crystals to provide the position a
nd profile of the normal and hybrid MD peaks. We use surface secondary
beams in order to achieve high resolution in intensity and peak posit
ion. These conditions together with the absorption involved in the LS
hybrid reflections enable us to test the stress state of the layer by
determining the misfit dislocation and the degree of cohesion between
the buffer and epitaxial layers. Here, the method was applied in the a
nalysis of thin (500 Angstrom) and thick (1.2 mu m) GaAs layers grown
by Vacuum Chemical Epitaxy (VCE) on Si (001).