EVIDENCE FOR THE IMPROVED DEFECT-POOL MODEL FOR GAP STATES IN AMORPHOUS-SILICON FROM CHARGE DLTS EXPERIMENTS ON UNDOPED A-SI-H

Authors
NADAZDY V DURNY R PINCIK E
Citation
V. Nadazdy et al., EVIDENCE FOR THE IMPROVED DEFECT-POOL MODEL FOR GAP STATES IN AMORPHOUS-SILICON FROM CHARGE DLTS EXPERIMENTS ON UNDOPED A-SI-H, Physical review letters, 78(6), 1997, pp. 1102-1105
Citations number
11
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
78
Issue
6
Year of publication
1997
Pages
1102 - 1105
Database
ISI
SICI code
0031-9007(1997)78:6<1102:EFTIDM>2.0.ZU;2-Y
Abstract
Results of the first charge deep level transient spectroscopy (DLTS) m easurements on undoped a-Si:H are presented. The ability of the charge DLTS technique to resolve the gag-state distribution and to monitor d irectly its evolution after preequilibrium preparation by bias anneali ng is demonstrated. Three groups of gap states with mean energies of 0 .63, 0.82, and 1.25 eV are observed. The condition for their creation as well as the energy values are in a good agreement with the D+, D-0, and D- states of the improved defect-pool model.