A HIGH-DENSITY MULTIPLE-VALUED CONTENT-ADDRESSABLE MEMORY-BASED ON ONE TRANSISTOR CELL

This paper presents a high-density multiple-valued content-addressable memory (MVCAM) based on a floating-gate MOS device. In the proposed C AM, a basic operation performed in each cell is a threshold function t hat is a kind of inverter whose threshold value is programmable. Vario us multiple-valued operations for data retrieval can be easily perform ed using threshold functions. Moreover, each cell circuit in the MVCAM can be implemented using only a single floating-gate MOS transistor. As a result, the cell area of the four-valued CAM are reduced to 37% i n comparison with that of the conventional dynamic CAM cell.