IN-DIFFUSION AND ISOTHERMAL ANNEALING OF IRON-RELATED DEFECTS IN N-TYPE SILICON

In iron-related deep levels in n-type silicon, the introduced concentr ations of E(c)-0.21 eV(B) and E(c)-0.41 eV(C) levels decrease with inc reasing the diffusion time at 1160-degrees-C, indicating that the form ation process includes the conversion process into other types of comp lexes. The concentration of the C level decays exponentially with the duration of isothermal annealing up to 200-degrees-C, the time constan t activation energy being 0.65 eV. The results indicate that the obser ved defects are due to the intermediate states in consecutive reaction s of iron-related complex formation.