STRUCTURAL AND CHEMICAL-ANALYSIS OF C-H,O SI-H,O MULTILAYERS DEPOSITED BY REACTIVE RF-SPUTTERING/

Hydro-oxygenated carbon (C:H,O) and silicon (Si:H,O) layers are deposi ted by RF sputtering of graphite and silicon targets in a mixture of a rgon, hydrogen and oxygen gases. C:H,O/Si:H,O/C:H,O/Si:H,O ... multila yers are obtained by sequential deposition of C:H,O and Si:H,O layers. Infrared (IR) spectroscopy, Grazing Incidence X-ray Diffraction (GIXD ) and X-ray Photoelectron Spectroscopy (XPS) techniques have been used to analyse the formed multilayers. The IR spectra made on as deposite d structures show the presence of Si-C, Si-O, C-O, Si-H, C-H and C=C b onds. This result indicates an interfacial reactivity between Si:H,O a nd C:H,O layers. The latter result is confirmed by the XPS measurement s. After an annealing at 850-degrees-c for two hours under argon atmos phere (10(-3) mbar), the concentration of the Si-C bonds is increased by a factor two while the Si-H and C-H bonds disappear completely. The GIXD measurements show that the multilayers are amorphous when anneal ed below 750-degrees-C, and they are crystallized with the formation o f the alpha-SiC phase if the heat treatment is made at 850-degrees-C. The mean size of the microcrystallites is 50 angstrom about.