INFLUENCE OF GE CONTENT ON VIBRATIONAL AND OPTICAL-PROPERTIES OF ALPHA-SI1-XGEXH THIN-FILMS

Authors
DIMOVAMALINOVSKA D NEDIALKOVA L
Citation
D. Dimovamalinovska et L. Nedialkova, INFLUENCE OF GE CONTENT ON VIBRATIONAL AND OPTICAL-PROPERTIES OF ALPHA-SI1-XGEXH THIN-FILMS, Solar energy materials and solar cells, 31(2), 1993, pp. 283-289
Citations number
20
Categorie Soggetti
Energy & Fuels","Material Science
Journal title
Solar energy materials and solar cells → ACNP
ISSN journal
09270248
Volume
31
Issue
2
Year of publication
1993
Pages
283 - 289
Database
ISI
SICI code
0927-0248(1993)31:2<283:IOGCOV>2.0.ZU;2-H
Abstract
The effect of Ge on the optical gap and network short-range order in a lpha-Si1-xGex:H alloys has been obtained by optical-absorption and Ram an-scattering measurements. A comparison of the correlation between Ra man Si-Si transverse optical (TO) peak width and the optical gap for f ilms with different Ge concentration (0.16 < x < 0.4) allows a separat ion of the roles of Ge-induced bond angle disordering and alloy energy band changes.