MECHANISM FOR THE NANOMETER-SCALE MODIFICATION ON HOPG SURFACE BY SCANNING TUNNELING MICROSCOPE

Authors
WANG ZH DAI CC ZHANG PC HUANG GZ LI RL GUO Y BAI CL
Citation
Zh. Wang et al., MECHANISM FOR THE NANOMETER-SCALE MODIFICATION ON HOPG SURFACE BY SCANNING TUNNELING MICROSCOPE, Chinese Physics Letters, 10(9), 1993, pp. 535-538
Citations number
9
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
10
Issue
9
Year of publication
1993
Pages
535 - 538
Database
ISI
SICI code
0256-307X(1993)10:9<535:MFTNMO>2.0.ZU;2-7
Abstract
A technique applying voltage across the tunnel junction for writing pe rmanent features on graphite with lines about 10 nm width using our ho me-built scanning tunneling microscope has been presented. Multiple-ti p effects while modifying the surface are often met. The phenomena are explained in terms of the strong electric field existing at the junct ions between the tip and the surface. In addition, the shape of the st ructure indented by the tip is in agreement with that of the tip.