INVESTIGATION OF FIELD, CARRIER, AND COHERENT PHONON DYNAMICS IN LOW-TEMPERATURE-GROWN GAAS

Citation
T. Dekorsy et al., INVESTIGATION OF FIELD, CARRIER, AND COHERENT PHONON DYNAMICS IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 63(21), 1993, pp. 2899-2901
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
21
Year of publication
1993
Pages
2899 - 2901
Database
ISI
SICI code
0003-6951(1993)63:21<2899:IOFCAC>2.0.ZU;2-Z
Abstract
We compare the dynamics of electric field, transport, and coherent pho nons in as-grown and annealed low-temperature (LT) GaAs by an electro- optic technique on a subpicosecond time scale. The buildup and decay o f space-charge fields associated with the photo-Dember effect are inve stigated. The recombination dynamics of trapped carriers is monitored via the ps decay of the electro-optic signal. Differences in annealed and as-grown LT GaAs are related to the different microscopic form of excess arsenic and point defect density. In the coherent phonon signal a large red shift of the LO phonon and an additional local vibration below the LO phonon provides information on structural defects in as-g rown LT GaAs.