OPTICALLY-ACTIVE 3-DIMENSIONALLY CONFINED STRUCTURES REALIZED VIA MOLECULAR-BEAM EPITAXIAL-GROWTH ON NONPLANAR GAAS (111)B

We report the first realization on nonplanar patterned substrates of o ptically active three-dimensionally confined semiconductor volumes cre ated in situ via a one-step molecular beam epitaxial growth. Growth is carried out on pyramidal mesas on (111) B substrates and in a regime that results in the emergence of three equivalent {110} side facets wh ich overtake the as-patterned {100} side facets and lead to mesa pinch -off. Transmission electron microscopy along with spatially and spectr ally resolved cathodoluminescence provide evidence for emission from l aterally confined regions with lateral linear dimensions less than or similar 100 nm.