SIGE GATE OXIDE PREPARED AT LOW-TEMPERATURE IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA

SiGe gate oxide prepared at low temperatures (25-400-degrees-C) by ele ctron cyclotron resonance (ECR) plasma is reported. 100-200 angstrom o xides were grown on Si0.8Ge0.2 substrates by ECR oxidation under diffe rent bias conditions. The electrical properties of the ECR grown oxide s are strong functions of processing conditions and post-processing tr eatments. High frequency (1 MHz) and quasistatic capacitance-voltage E CR grown oxides' measurements indicate that device quality gate oxides can be produced by this process; specifically, the fixed charge and i nterface state densities are comparable to those of ECR grown metal-ox ide-semiconductor capacitors on silicon with an aluminum gate.