SPATIAL CONFINEMENT OF MISFIT DISLOCATIONS AT THE INTERFACE OF CDSE GAAS(111)/

Authors
GRUN M KLINGSHIRN C ROSENAUER A ZWECK J GEBHARDT W
Citation
M. Grun et al., SPATIAL CONFINEMENT OF MISFIT DISLOCATIONS AT THE INTERFACE OF CDSE GAAS(111)/, Applied physics letters, 63(21), 1993, pp. 2947-2948
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
21
Year of publication
1993
Pages
2947 - 2948
Database
ISI
SICI code
0003-6951(1993)63:21<2947:SCOMDA>2.0.ZU;2-4
Abstract
High-resolution electron microscopy of wurtzite type CdSe epilayers gr own on (111) GaAs revealed that interfacial misfit dislocations are pe rfect 60-degrees dislocations with Burgers vectors parallel to the int erface. Glide is therefore limited to the (0001) interface plane and t he extension of dislocations into the epilayer is suppressed. Single-b eam bright field imaging shows that the 7% mismatched epilayer is free of a dislocation network in its volume.