2-DIMENSIONAL ELECTRON AND HOLE STATES AT THE STAGGERED BAND LINE-UP INTERFACE OF INALAS INP/

Crystallographic and electronic properties of the staggered band line- up InAlAs/InP interface grown by metal-organic chemical-vapor depositi on are studied using double crystal x-ray diffraction, Shubnikov-de-Ha as (SdH), capacitance-voltage, and calorimetric absorption experiments . Observation of a large number of Pendellosung oscillations in the x- ray rocking curves, which can be perfectly modeled using dynamical dif fraction theory, demonstrate the high crystallographic quality of the interfaces. A two-dimensional electron gas (2DEG) with n(s) approximat ely 6 x 10(11) cm-2 is formed at the InP side of the interface by carr ier transfer from the unintentionally doped InAlAs. The electronic str ucture of the interface is derived from self-consistent band structure calculation including many particle corrections and good agreements a re found with experimentally observed subband transitions up to n=4.