GATE-LENGTH DEPENDENCE OF THE LOW-FREQUENCY NOISE OVERSHOOT IN PARTIALLY DEPLETED SOI N-MOSFETS

Authors
SIMOEN E CLAEYS C
Citation
E. Simoen et C. Claeys, GATE-LENGTH DEPENDENCE OF THE LOW-FREQUENCY NOISE OVERSHOOT IN PARTIALLY DEPLETED SOI N-MOSFETS, Solid state communications, 88(7), 1993, pp. 507-508
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
88
Issue
7
Year of publication
1993
Pages
507 - 508
Database
ISI
SICI code
0038-1098(1993)88:7<507:GDOTLN>2.0.ZU;2-H
Abstract
This letter investigates the effective gate-length L(eff) dependence o f the low-frequency noise overshoot in partially-depleted Silicon-on-I nsulator n-MOSFET's. It will be demonstrated that the noise overshoot amplitude is proportional to 1/L(eff) and to the reciprocal noise freq uency 1/f. The noise overshoot position is a linear function of the sa turation voltage. These findings will be discussed in view of a recent ly developed model for the noise overshoot.