W. Li et al., ACOUSTOELECTRIC NONLINEAR EFFECT OF VERTICALLY INCIDENT BULK WAVE AT LINBO3 SI BOUNDARY/, Chinese Physics Letters, 10(6), 1993, pp. 369-370
The acoustoelectric nonlinear effect due to the electrical nonlinearit
y of semi-conductor has been observed as presented in this article by
using vertically incident bulk wave at LiNbO3/Si boundary. This effect
is closely related to the bias voltage applied to the semiconductor S
i. The results we have obtained provide a feasible new structure for t
he further study of acoustoelectric nonlinear coupling between piezoel
ectrics and semiconductors.