ACOUSTOELECTRIC NONLINEAR EFFECT OF VERTICALLY INCIDENT BULK WAVE AT LINBO3 SI BOUNDARY/

Authors
LI W YIN JH SHUI YG
Citation
W. Li et al., ACOUSTOELECTRIC NONLINEAR EFFECT OF VERTICALLY INCIDENT BULK WAVE AT LINBO3 SI BOUNDARY/, Chinese Physics Letters, 10(6), 1993, pp. 369-370
Citations number
3
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
10
Issue
6
Year of publication
1993
Pages
369 - 370
Database
ISI
SICI code
0256-307X(1993)10:6<369:ANEOVI>2.0.ZU;2-8
Abstract
The acoustoelectric nonlinear effect due to the electrical nonlinearit y of semi-conductor has been observed as presented in this article by using vertically incident bulk wave at LiNbO3/Si boundary. This effect is closely related to the bias voltage applied to the semiconductor S i. The results we have obtained provide a feasible new structure for t he further study of acoustoelectric nonlinear coupling between piezoel ectrics and semiconductors.