GROWTH AND CHARACTERIZATION OF STRAIN COMPENSATED SI1-X-YGEXCY EPITAXIAL LAYERS

We have fabricated partially strain compensated, epitaxial layers of t he ternary alloy SiGeC on (001)Si substrates. Using a rapid thermal ch emical vapor deposition reactor working at reduced pressure and at 650 degrees C, we obtained strained SiGe layers which can be compensated for zero net strain when substitutional C is added during the layer gr owth. These solid solution layers, characterized essentially by optica l microscopy and X-ray diffraction, are partially strain compensated b ecause the misfit dislocations observed on fully strained layers are n o longer present with the addition of a small percentage of C.