EQUIVALENT-CIRCUIT, SCALING, RANDOM-WALK SIMULATION, AND AN EXPERIMENTAL-STUDY OF SELF-SIMILAR FRACTAL ELECTRODES AND INTERFACES

Citation
B. Sapoval et al., EQUIVALENT-CIRCUIT, SCALING, RANDOM-WALK SIMULATION, AND AN EXPERIMENTAL-STUDY OF SELF-SIMILAR FRACTAL ELECTRODES AND INTERFACES, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 48(5), 1993, pp. 3333-3344
Citations number
48
Categorie Soggetti
Physycs, Mathematical","Phsycs, Fluid & Plasmas
ISSN journal
1063651X
Volume
48
Issue
5
Year of publication
1993
Pages
3333 - 3344
Database
ISI
SICI code
1063-651X(1993)48:5<3333:ESRSAA>2.0.ZU;2-4
Abstract
A comprehensive study of the macroscopic transport parameters of self- similar interfaces is presented. The iteration of a simplified equival ent leads to the prediction of a simple mathematical expression for th e impedance of fractal electrodes in d=2 and 3 dimensions. The same va lue is predicted by scaling arguments and verified by extended numeric al simulations in d=2. Experiments on model electrodes confirm the the oretical prediction. We introduce the approximate concept of an inform ation fractal. It gives a very simple access to the theory and a descr iption of the regions of the fractal surface which are really active f or the transport. The same result should apply to transport across fra ctal membranes and to certain Eley-Rideal heterogeneous catalysis proc esses.