Grating-coupled surface-emitting InGaAs/AlGaAs lasers with a single la
rge area output coupler were fabricated by integrating a second order
surface grating with corner reflectors. The grating as well as the cor
ner reflectors were fabricated using electron beam lithography and che
mically assisted ion beam etching, producing a uniform rectangular gra
ting and high quality corner facets. A thin etch-stop layer incorporat
ed in the epitaxial structure made it possible to combine precise cont
rol of the grating position with a strained layer SQW-GRINSCH structur
e. Well behaved lateral modes were observed in 70-mum-wide lasers, emi
tting narrow beams in both the lateral and the longitudinal direction.
Threshold current densities as low as 99 A/cm2 were measured for 1200
-mum-long lasers.