SEPARATE-CONFINEMENT HETEROSTRUCTURE DEPENDENCE OF THE EFFECTIVE CARRIER RECOMBINATION COEFFICIENT OF STRAINED INGAAS INGAASP MULTIPLE-QUANTUM-WELL LASERS/

Authors
ODAGAWA T NAKAJIMA K TANAKA K NOBUHARA H INOUE T OKAZAKI N WAKAO K
Citation
T. Odagawa et al., SEPARATE-CONFINEMENT HETEROSTRUCTURE DEPENDENCE OF THE EFFECTIVE CARRIER RECOMBINATION COEFFICIENT OF STRAINED INGAAS INGAASP MULTIPLE-QUANTUM-WELL LASERS/, Applied physics letters, 63(22), 1993, pp. 2996-2998
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
22
Year of publication
1993
Pages
2996 - 2998
Database
ISI
SICI code
0003-6951(1993)63:22<2996:SHDOTE>2.0.ZU;2-N
Abstract
We experimentally investigated the separate-confinement heterostructur e (SCH) layer thickness and SCH band-gap wavelength dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers. The dependence is explained by the carr ier transport between the SCH layers and the wells.