S. Guha et al., ROLE OF STACKING-FAULTS AS MISFIT DISLOCATION SOURCES AND NONRADIATIVE RECOMBINATION CENTERS IN II-VI HETEROSTRUCTURES AND DEVICES, Applied physics letters, 63(22), 1993, pp. 3023-3025
We have investigated the role of stacking faults in high quality ZnSxS
e1-x heterostructures and a ZnSxSe1-x/CdxZn1-xSe based II-VI blue-gree
n quantum well laser structure grown on GaAs substrates. We find that
these stacking faults, which originate at the epilayer/substrate inter
face during the initial stages of the growth, act as sources for misfi
t dislocation formation in the quantum well region of ZnSxSe1-x/CdxZn1
-xSe based devices. We have analyzed the formation mechanism of these
dislocations. We also show through cathodoluminescence microscopy that
these stacking faults act as nonradiative recombination centers which
therefore reduce the luminescence of these devices.