We present a microscopic analysis of current fluctuations in a GaAs Sc
hottky-barrier diode under forward-bias conditions. The calculations a
re performed by employing a one-dimensional Poisson solver coupled sel
f-consistently with an ensemble Monte Carlo simulator. Results support
and complement previous findings of M. Trippe, G. Bosman, and A. van
der Ziel [IEEE Trans. Microwave Theory Tech. MTT-34, 1183 (1986)] base
d on phenomenological models. In particular, the coupling between fluc
tuations in carrier velocity and self-consistent field is found to be
essential in determining the noise spectra as a function of applied vo
ltages.